1 A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature IEEE Transactions on Electron Devices 2021 SCI 通讯作者

2 Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination IEEE Transactions on Electron Devices 2021 SCI 通讯作者

3 Single Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices IEEE Transactions on Electron Devices 2020 SCI 通讯作者

4 4H-SiC UMOSFET With an Electric Field Modulation Region Below P-Body IEEE Transactions on Electron Devices 2020 SCI 通讯作者

5 Fully Depleted SOI Pixel Detector with Multijunction Structure in p-Type Substrate IEEE Transactions on Electron Devices 2019 SCI 通讯作者

6 Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer IEEE Transactions on Electron Devices 2019 SCI 第一作者

7 Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) with Anode-Via Vertical Field Plate Structure IEEE Transactions on Electron Devices 2018 SCI 第一作者

8 High Performance of Polysilicon/4H-SiC Dual-heterojunction Trench Diode IEEE Transactions on Electron Devices 2018 SCI 第一作者

9 Multiple Trench Split gate SOI LDMOS Integrated with Schottky Rectifier IEEE Transactions on Electron Devices 2017 SCI 第一作者

10 4H–SiC Step Trench Gate Power Metal–Oxide–Semiconductor Field-Effect Transistor IEEE Electron Device Letters 2016 SCI 第一作者

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