1、High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode，IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY ，2021，SCI

2、Improved interface characteristics of Mo/4H-SiC schottky contact，Solid-State Electronics，2021，SCI

3、a Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC，Solid-State Electronics，2021，SCI

4、Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer，Solid-State Electronics，2021，SCI

5、Evaluation of Cu(Ti) and Cu(Zr) alloys in barrier-less Cu metallization，Materials Chemistry and Physics，2018，SCI

6、Reliability improvements in SOI-like MOSFET with ESD and self-heating effect，Micro & Nano Letters，2018，SCI

7、Evaluation of Cu(V) self-forming barrier for Cu metallization.，Journal of Alloys and Compounds，2016，SCI

8、Influence of field- assisted annealing on Cu(V) barrier-less metallization，Vacuum，2016，SCI

9、Feasibility study on the use of Cu(Co) alloy for barrierless copper metallization，Thin Solid Films，2016，SCI

铜金属化自形成阻挡层低温退火方法，ZL201010282532.0

具有渐变体连接的SOI LDMOS晶体管，ZL200910071882.X

4H-SiC沟槽绝缘栅双极型晶体，ZL202010023568.0

一种4H-SiC沟槽绝缘栅双极型晶体管，ZL202010023544.5

一种适用于功率半导体器件的抗单粒子烧毁结构，ZL201910786441.1

N型和P型兼容的铜基碳化硅欧姆接触机理与关键技术研究,国家自然科学基金青年基金,纵向,主持在研,2020/01-2022/12

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